Silicon shadow mask MOVPE for in-plane thickness control of InGaAsP/InP structures

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 661-664

  Suzuki, M ^a   Aoki, M ^a   Komori, M ^a   Sato, H ^a   Minagawa, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THICKNESS CONTROL;

MULTIPLE QUANTUM WELLS; SILICON SHADOW MASK;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030704028     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00514-3     Document Type: Article

References (10)

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