28-V low thermal-impedance hbt with 20-w cw output power

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 12 PART 2, 1997, Pages 2224-2228

  Hill, Darrell ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Heterojunction bipolar transistors; Microwave bipolar transistors; Microwave transistors

Indexed keywords

FLIP CHIP DEVICES; HEAT RESISTANCE; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

LOW THERMAL IMPEDANCE (LTI) TECHNOLOGY; MICROWAVE BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031354185     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.643820     Document Type: Article

References (8)

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