Current Gain Collapse in Microwave Multifinger Heterojunction Bipolar Transistors Operated at Very High Power Densities

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 1917-1927

  Liu, William ^a   Nelson, Steve ^a   Hill, Darrell G ^a   Khatibzadeh, Ali ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; GAIN CONTROL; GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS; MICROWAVE AMPLIFIERS; VOLTAGE MEASUREMENT;

CURRENT GAIN COLLAPSE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH POWER DENSITIES;

BIPOLAR TRANSISTORS;

EID: 0027697678     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239729     Document Type: Article

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