L-and S-band 50-watt power GaAs MESFETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 539-542

  Ishimura, Hiroshi ^a   Murayama, Masaya ^a   Arai, Kazuhiro ^a   Saito, Yasunobu ^a   Oda, Yuji ^a   Kuroda, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ENERGY EFFICIENCY; GATES (TRANSISTOR); ION IMPLANTATION; PERFORMANCE; PRODUCT DESIGN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DRAIN BREAKDOWN VOLTAGE; GAIN COMPRESSION POINT; POWER ADDED EFFICIENCY;

MESFET DEVICES;

EID: 0029707961     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)