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Volumn 36, Issue 5, 1989, Pages 846-853

Self-Consistent Particle Simulation for (AlGa)As/ GaAs HBT's with Improved Base-Collector Structures

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS--PERFORMANCE;

EID: 0024664765     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.299665     Document Type: Article
Times cited : (34)

References (15)
  • 1
    • 84941548768 scopus 로고
    • high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with non-alloyed emitter contacts
    • presented at the 45th Ann. Dev. Res. Conf., paper IVA-2
    • K. Nagata, O. Nakajima, Y. Yamauchi, H. Ito, T. Nittono, and T. Ishibashi, “high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with non-alloyed emitter contacts,” presented at the 45th Ann. Dev. Res. Conf., paper IVA-2, 1987.
    • (1987)
    • Nagata, K.1    Nakajima, O.2    Yamauchi, Y.3    Ito, H.4    Nittono, T.5    Ishibashi, T.6
  • 2
    • 84941548769 scopus 로고
    • A novel AlGaAs/GaAs HBT structure for near-ballistic collector
    • presented at the 45th Ann. Dev. Res. Conf., paper IVA-6
    • T. Ishibashi, and Y. Yamauchi, “A novel AlGaAs/GaAs HBT structure for near-ballistic collector,” presented at the 45th Ann. Dev. Res. Conf., paper IVA-6, 1987.
    • (1987)
    • Ishibashi, T.1    Yamauchi, Y.2
  • 3
    • 0021484160 scopus 로고
    • Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors
    • Sept.
    • K. Tomizawa, Y. Awano, and N. Hashizume, “Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-5, pp. 362-364, Sept. 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 362-364
    • Tomizawa, K.1    Awano, Y.2    Hashizume, N.3
  • 4
    • 0021408210 scopus 로고
    • Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors
    • Apr.
    • M. Kurata and J. Yoshida, “Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 467-473, Apr. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 467-473
    • Kurata, M.1    Yoshida, J.2
  • 5
    • 0022760113 scopus 로고
    • Electron transport across a semiconductor heterojunction
    • Aug.
    • H. Maeda, “Electron transport across a semiconductor heterojunction,” Japan. J. Appl. Phys., vol. 25, pp. 1221-1226, Aug. 1986.
    • (1986) Japan. J. Appl. Phys. , vol.25 , pp. 1221-1226
    • Maeda, H.1
  • 6
    • 0017553475 scopus 로고
    • Velocity-field characteristics of GaAs with conduction-band ordering
    • Nov.
    • M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, “Velocity-field characteristics of GaAs with conduction-band ordering,” J. Appl. Phys., vol. 48, pp. 4587-4590, Nov. 1977.
    • (1977) J. Appl. Phys. , vol.48 , pp. 4587-4590
    • Littlejohn, M.A.1    Hauser, J.R.2    Glisson, T.H.3
  • 9
    • 0014846935 scopus 로고
    • Monte Carlo determination of electron transport properties in gallium arsenide
    • W. Fawcett, A. D. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in gallium arsenide,” J. Phys. Chem. Solids, vol. 31, pp. 1963-1990, 1970.
    • (1970) J. Phys. Chem. Solids , vol.31 , pp. 1963-1990
    • Fawcett, W.1    Boardman, A.D.2    Swain, S.3
  • 10
    • 0005440223 scopus 로고
    • Velocity-field relationship of InAs-InP alloys including the effects of alloy scattering
    • Apr.
    • J. R. Hauser, M. A. Littlejohn, and T. H. Glisson, “Velocity-field relationship of InAs-InP alloys including the effects of alloy scattering,” Appl. Phys. Lett., vol. 28, pp. 458-461, Apr. 1976.
    • (1976) Appl. Phys. Lett. , vol.28 , pp. 458-461
    • Hauser, J.R.1    Littlejohn, M.A.2    Glisson, T.H.3
  • 11
    • 0000964043 scopus 로고
    • Electron scattering by ionized impurities in semiconductors
    • part, Oct.
    • D. Chattopadhyay and H. J. Queisser, “Electron scattering by ionized impurities in semiconductors,” Rev. Mod. Phys., vol. 53, part 1, pp. 745-768, Oct. 1981.
    • (1981) Rev. Mod. Phys. , vol.53 , Issue.1 , pp. 745-768
    • Chattopadhyay, D.1    Queisser, H.J.2
  • 12
    • 0000385558 scopus 로고
    • Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors
    • Dec.
    • M. E. Kim, A. Das, and S. D. Senturia, “Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors,” Phys. Rev. B, vol. 18, pp. 6890-6899, Dec. 1978.
    • (1978) Phys. Rev. B , vol.18 , pp. 6890-6899
    • Kim, M.E.1    Das, A.2    Senturia, S.D.3
  • 13
    • 0000394910 scopus 로고
    • Angular dependence of the characteristic energy loss of electrons passing through metal foils
    • Jan.
    • R. A. Ferrell, “Angular dependence of the characteristic energy loss of electrons passing through metal foils,” Phys. Rev., vol. 101, pp. 554-563, Jan. 1956.
    • (1956) Phys. Rev. , vol.101 , pp. 554-563
    • Ferrell, R.A.1
  • 14
    • 0022766884 scopus 로고
    • A proposed structure for collector transit time reduction in AlGaAs/GaAs bipolar transistors
    • Aug.
    • C. M. Maziar, M. E. Klausmeier-Brown, and M. S. Lundstrom, “A proposed structure for collector transit time reduction in AlGaAs/GaAs bipolar transistors,” IEEE Electron Device Lett., vol. EDL-7, pp. 483-485, Aug. 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 483-485
    • Maziar, C.M.1    Klausmeier-Brown, M.E.2    Lundstrom, M.S.3
  • 15
    • 0022241851 scopus 로고
    • Luminescence of hot carrier in the base of an AlGaAs/GaAs HBT
    • ch. 7
    • T. Ishibashi, H. Ito, and T. Sugeta, “Luminescence of hot carrier in the base of an AlGaAs/GaAs HBT,” Inst. Phys. Conf. Ser., no. 74, ch. 7, pp. 593-598, 1984.
    • (1984) Inst. Phys. Conf. Ser. , Issue.74 , pp. 593-598
    • Ishibashi, T.1    Ito, H.2    Sugeta, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.