-
1
-
-
84941548768
-
high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with non-alloyed emitter contacts
-
presented at the 45th Ann. Dev. Res. Conf., paper IVA-2
-
K. Nagata, O. Nakajima, Y. Yamauchi, H. Ito, T. Nittono, and T. Ishibashi, “high-speed performance of AlGaAs/GaAs heterojunction bipolar transistors with non-alloyed emitter contacts,” presented at the 45th Ann. Dev. Res. Conf., paper IVA-2, 1987.
-
(1987)
-
-
Nagata, K.1
Nakajima, O.2
Yamauchi, Y.3
Ito, H.4
Nittono, T.5
Ishibashi, T.6
-
2
-
-
84941548769
-
A novel AlGaAs/GaAs HBT structure for near-ballistic collector
-
presented at the 45th Ann. Dev. Res. Conf., paper IVA-6
-
T. Ishibashi, and Y. Yamauchi, “A novel AlGaAs/GaAs HBT structure for near-ballistic collector,” presented at the 45th Ann. Dev. Res. Conf., paper IVA-6, 1987.
-
(1987)
-
-
Ishibashi, T.1
Yamauchi, Y.2
-
3
-
-
0021484160
-
Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors
-
Sept.
-
K. Tomizawa, Y. Awano, and N. Hashizume, “Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-5, pp. 362-364, Sept. 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 362-364
-
-
Tomizawa, K.1
Awano, Y.2
Hashizume, N.3
-
4
-
-
0021408210
-
Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors
-
Apr.
-
M. Kurata and J. Yoshida, “Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 467-473, Apr. 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 467-473
-
-
Kurata, M.1
Yoshida, J.2
-
5
-
-
0022760113
-
Electron transport across a semiconductor heterojunction
-
Aug.
-
H. Maeda, “Electron transport across a semiconductor heterojunction,” Japan. J. Appl. Phys., vol. 25, pp. 1221-1226, Aug. 1986.
-
(1986)
Japan. J. Appl. Phys.
, vol.25
, pp. 1221-1226
-
-
Maeda, H.1
-
6
-
-
0017553475
-
Velocity-field characteristics of GaAs with conduction-band ordering
-
Nov.
-
M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, “Velocity-field characteristics of GaAs with conduction-band ordering,” J. Appl. Phys., vol. 48, pp. 4587-4590, Nov. 1977.
-
(1977)
J. Appl. Phys.
, vol.48
, pp. 4587-4590
-
-
Littlejohn, M.A.1
Hauser, J.R.2
Glisson, T.H.3
-
8
-
-
0021604111
-
CV profiling studies on MBE-grown GaAs/AlGaAs heterojunction interface
-
Japan)
-
M. O. Watanabe, J. Yoshida, M. Mashita, T. Nakanishi, and A. Hojo, “CV profiling studies on MBE-grown GaAs/AlGaAs heterojunction interface,” in Extended Abstracts 16th Conf. Solid State Devices and Materials (Kobe, Japan), 1984, pp. 181-184.
-
(1984)
Extended Abstracts 16th Conf. Solid State Devices and Materials (Kobe
, pp. 181-184
-
-
Watanabe, M.O.1
Yoshida, J.2
Mashita, M.3
Nakanishi, T.4
Hojo, A.5
-
9
-
-
0014846935
-
Monte Carlo determination of electron transport properties in gallium arsenide
-
W. Fawcett, A. D. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in gallium arsenide,” J. Phys. Chem. Solids, vol. 31, pp. 1963-1990, 1970.
-
(1970)
J. Phys. Chem. Solids
, vol.31
, pp. 1963-1990
-
-
Fawcett, W.1
Boardman, A.D.2
Swain, S.3
-
10
-
-
0005440223
-
Velocity-field relationship of InAs-InP alloys including the effects of alloy scattering
-
Apr.
-
J. R. Hauser, M. A. Littlejohn, and T. H. Glisson, “Velocity-field relationship of InAs-InP alloys including the effects of alloy scattering,” Appl. Phys. Lett., vol. 28, pp. 458-461, Apr. 1976.
-
(1976)
Appl. Phys. Lett.
, vol.28
, pp. 458-461
-
-
Hauser, J.R.1
Littlejohn, M.A.2
Glisson, T.H.3
-
11
-
-
0000964043
-
Electron scattering by ionized impurities in semiconductors
-
part, Oct.
-
D. Chattopadhyay and H. J. Queisser, “Electron scattering by ionized impurities in semiconductors,” Rev. Mod. Phys., vol. 53, part 1, pp. 745-768, Oct. 1981.
-
(1981)
Rev. Mod. Phys.
, vol.53
, Issue.1
, pp. 745-768
-
-
Chattopadhyay, D.1
Queisser, H.J.2
-
12
-
-
0000385558
-
Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors
-
Dec.
-
M. E. Kim, A. Das, and S. D. Senturia, “Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors,” Phys. Rev. B, vol. 18, pp. 6890-6899, Dec. 1978.
-
(1978)
Phys. Rev. B
, vol.18
, pp. 6890-6899
-
-
Kim, M.E.1
Das, A.2
Senturia, S.D.3
-
13
-
-
0000394910
-
Angular dependence of the characteristic energy loss of electrons passing through metal foils
-
Jan.
-
R. A. Ferrell, “Angular dependence of the characteristic energy loss of electrons passing through metal foils,” Phys. Rev., vol. 101, pp. 554-563, Jan. 1956.
-
(1956)
Phys. Rev.
, vol.101
, pp. 554-563
-
-
Ferrell, R.A.1
-
14
-
-
0022766884
-
A proposed structure for collector transit time reduction in AlGaAs/GaAs bipolar transistors
-
Aug.
-
C. M. Maziar, M. E. Klausmeier-Brown, and M. S. Lundstrom, “A proposed structure for collector transit time reduction in AlGaAs/GaAs bipolar transistors,” IEEE Electron Device Lett., vol. EDL-7, pp. 483-485, Aug. 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-7
, pp. 483-485
-
-
Maziar, C.M.1
Klausmeier-Brown, M.E.2
Lundstrom, M.S.3
-
15
-
-
0022241851
-
Luminescence of hot carrier in the base of an AlGaAs/GaAs HBT
-
ch. 7
-
T. Ishibashi, H. Ito, and T. Sugeta, “Luminescence of hot carrier in the base of an AlGaAs/GaAs HBT,” Inst. Phys. Conf. Ser., no. 74, ch. 7, pp. 593-598, 1984.
-
(1984)
Inst. Phys. Conf. Ser.
, Issue.74
, pp. 593-598
-
-
Ishibashi, T.1
Ito, H.2
Sugeta, T.3
|