Effects of discharge frequency on the ion-current density and etching characteristics in high-density Cl2 plasmas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 10 PART A, 1997, Pages

  Samukawa, Seiji ^a   Tsukada, Tsutomu ^b  

^a NEC CORPORATION   (Japan)

^b Magnetic Thin Film Development Division Process Development Center General Business Headquarters   (Japan)

Author keywords

Electron collision frequency; Etching selectivity; Inductive coupled plasma; Ion current density; Ion energy; Process window; Ultrahigh frequency plasma

Indexed keywords

CHLORINE; CURRENT DENSITY; ETCHING; GATES (TRANSISTOR); IONIZATION OF GASES; IONS; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SILICA;

ELECTRON COLLISION FREQUENCY; INDUCTIVELY COUPLED PLASMAS (ICP); ULTRAHIGH FREQUENCY (UHF) PLASMAS;

PLASMAS;

EID: 0031245945     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1354     Document Type: Article

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