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Volumn 36, Issue 10 PART A, 1997, Pages

Effects of discharge frequency on the ion-current density and etching characteristics in high-density Cl2 plasmas

Author keywords

Electron collision frequency; Etching selectivity; Inductive coupled plasma; Ion current density; Ion energy; Process window; Ultrahigh frequency plasma

Indexed keywords

CHLORINE; CURRENT DENSITY; ETCHING; GATES (TRANSISTOR); IONIZATION OF GASES; IONS; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SILICA;

EID: 0031245945     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1354     Document Type: Article
Times cited : (3)

References (9)
  • 4
    • 0002177694 scopus 로고
    • The Institute of Electrical Engineering of Japan, Tokyo
    • H. Ohtake and S. Samukawa: Proc. 17th Dry Process Symp. (The Institute of Electrical Engineering of Japan, Tokyo, 1995) p. 45.
    • (1995) Proc. 17th Dry Process Symp. , pp. 45
    • Ohtake, H.1    Samukawa, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.