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Volumn 36, Issue 10 PART A, 1997, Pages
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Effects of discharge frequency on the ion-current density and etching characteristics in high-density Cl2 plasmas
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Author keywords
Electron collision frequency; Etching selectivity; Inductive coupled plasma; Ion current density; Ion energy; Process window; Ultrahigh frequency plasma
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Indexed keywords
CHLORINE;
CURRENT DENSITY;
ETCHING;
GATES (TRANSISTOR);
IONIZATION OF GASES;
IONS;
POLYCRYSTALLINE MATERIALS;
PRESSURE EFFECTS;
SEMICONDUCTING SILICON;
SILICA;
ELECTRON COLLISION FREQUENCY;
INDUCTIVELY COUPLED PLASMAS (ICP);
ULTRAHIGH FREQUENCY (UHF) PLASMAS;
PLASMAS;
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EID: 0031245945
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l1354 Document Type: Article |
Times cited : (3)
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References (9)
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