Numerical analysis of silicon-on-lnsulator short channel effects in a radiation environment

Journal of Electronic Materials

Volumn 21, Issue 7, 1992, Pages 683-687

  Smith, J H ^a   Lawrence, R ^b   Campisi, G J ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b ARACOR ^*  (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

charge defect modeling; radiation effects; SIMOX; SOI

Indexed keywords

ELECTRIC FIELDS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE;

BURIED OXIDE; CHARGE ACCUMULATION; CHARGE DEFECT MODEL; SILICON ON INSULATOR; VOLTAGE THRESHOLD;

MOSFET DEVICES;

EID: 0026899019     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02655596     Document Type: Article

References (3)