Process variation effects on circuit performance: TCAD simulation of 256-mbit technology

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 16, Issue 11, 1997, Pages 1383-1389

  Murthy, C S ^a,b   Gall, M ^a,b  

^a IBM RESEARCH   (United States)

^b Siemens Components Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; MODELS; SECONDARY ION MASS SPECTROMETRY; TECHNOLOGY;

SIMULATED RING-OSCILLATOR PERFORMANCE;

INTEGRATED CIRCUITS;

EID: 0031270978     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.663828     Document Type: Article

References (13)

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