-
1
-
-
84937650904
-
Electromigration - A brief survey and some recent results
-
J. R. Black, "Electromigration - A brief survey and some recent results," IEEE Trans. Electron Devices, vol. ED-16, pp. 338-347, 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 338-347
-
-
Black, J.R.1
-
2
-
-
0030150128
-
Modeling and characterization of electromigration failures under bidirectional current stress
-
J. Tao, J. F. Chen, N. W. Cheung, and C. Hu, "Modeling and characterization of electromigration failures under bidirectional current stress," IEEE Trans. Electron Devices, vol. 43, pp. 800-808, 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 800-808
-
-
Tao, J.1
Chen, J.F.2
Cheung, N.W.3
Hu, C.4
-
3
-
-
0027685138
-
Short-time failure of metal interconnect caused by current pulses
-
J. E. Murguia and J. B. Bernstein, "Short-time failure of metal interconnect caused by current pulses," IEEE Electron Device Lett., vol. 14, pp. 481-483, 1993.
-
(1993)
IEEE Electron Device Lett.
, vol.14
, pp. 481-483
-
-
Murguia, J.E.1
Bernstein, J.B.2
-
4
-
-
0030182835
-
Reliability of metal interconnect after a high-current pulse
-
J. Scarpulla, D. C. Eng, S. Brown, and K. P. MacWilliams, "Reliability of metal interconnect after a high-current pulse," IEEE Electron Device Lett., vol. 17, pp. 322-324, 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 322-324
-
-
Scarpulla, J.1
Eng, D.C.2
Brown, S.3
MacWilliams, K.P.4
-
5
-
-
0022212124
-
Transmission line pulsing technique for circuit modeling of ESD phenomena
-
T. J. Maloney and N. Khurana, "Transmission line pulsing technique for circuit modeling of ESD phenomena," in Proc. EOS/ESD Symp., 1985, pp. 49-54.
-
(1985)
Proc. EOS/ESD Symp.
, pp. 49-54
-
-
Maloney, T.J.1
Khurana, N.2
-
6
-
-
0029700866
-
Characterization of VLSI interconnect heating and failure under ESD conditions
-
K. Banerjee, A. Amerasekera, and C. Hu, "Characterization of VLSI interconnect heating and failure under ESD conditions," in Proc. IEEE Int. Reliab. Phys. Symp., 1996, pp. 237-245.
-
(1996)
Proc. IEEE Int. Reliab. Phys. Symp.
, pp. 237-245
-
-
Banerjee, K.1
Amerasekera, A.2
Hu, C.3
-
7
-
-
0343038139
-
High-resolution temperature measurement of void dynamics induced by electromigration in aluminum metallization
-
S. Kondo and K. Hinode, "High-resolution temperature measurement of void dynamics induced by electromigration in aluminum metallization," Appl. Phys. Lett., vol. 67, pp. 1606-1608, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 1606-1608
-
-
Kondo, S.1
Hinode, K.2
-
8
-
-
0029212940
-
Temperature measurement of Al metallization and the study of Black's model in high current density
-
M. Sakimoto, T. Itoo, T. Fuji, H. Yamaguchi, and K. Eguchi, "Temperature measurement of Al metallization and the study of Black's model in high current density," in Proc. IEEE Int. Reliab. Phys. Symp., 1995, pp. 333-341.
-
(1995)
Proc. IEEE Int. Reliab. Phys. Symp.
, pp. 333-341
-
-
Sakimoto, M.1
Itoo, T.2
Fuji, T.3
Yamaguchi, H.4
Eguchi, K.5
-
9
-
-
0027629313
-
Thermoreflectance optical test probe for the measurement of current-induced temperature changes in microelectronic components
-
W. Clayes, S. Dilhaire, V. Quintard, J. P. Dom, and Y. Danto, "Thermoreflectance optical test probe for the measurement of current-induced temperature changes in microelectronic components," Reliab. Eng. Int., vol. 9, pp. 303-308, 1993.
-
(1993)
Reliab. Eng. Int.
, vol.9
, pp. 303-308
-
-
Clayes, W.1
Dilhaire, S.2
Quintard, V.3
Dom, J.P.4
Danto, Y.5
-
10
-
-
0031139570
-
Short-timescale thermal mapping of semiconductor devices
-
Y. S. Ju, O. W. Käding, Y.-K. Leung, S. S. Wong, and K. E. Goodson, "Short-timescale thermal mapping of semiconductor devices," IEEE Electron Device Lett., vol. 18, pp. 169-171, 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 169-171
-
-
Ju, Y.S.1
Käding, O.W.2
Leung, Y.-K.3
Wong, S.S.4
Goodson, K.E.5
|