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Volumn 395, Issue , 1996, Pages 709-714
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Exciton lifetimes in GaN
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
CRYSTALS;
ELECTRON EMISSION;
ELECTRON ENERGY LEVELS;
EXCITONS;
HETEROJUNCTIONS;
PHOTOLUMINESCENCE;
SPECTROSCOPY;
VAPOR PHASE EPITAXY;
BOUND EXCITONS;
COULOMB CORRELATION;
DECAY TIME;
FREE EXCITON;
NON RADIATIVE RECOMBINATION PROCESS;
OPTICAL TIME RESOLVED SPECTROSCOPY;
RADIATIVE LIFETIME;
SUBSTITUTIONAL DEFECT CONCENTRATION;
TIME RESOLVED PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0029770733
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (8)
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References (7)
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