Monolithic 24.9 GHz limiting amplifier using 0.2 μm-AlGaAs/GaAs-HEMTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 211-214

  Lao, Z ^a   Berroth, M ^a   Hurm, V ^a   Rieger Motzer, M ^a   Thiede, A ^a   Bronner, W ^a   Huelsmann, A ^a   Raynor, B ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC POWER SUPPLIES TO APPARATUS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

ACTIVE SOURCE FOLLOWERS; HIGH SPEED COMMUNICATION SYSTEMS; LINEAR AMPLIFIER; MONOLITHIC LIMITING AMPLIFIER;

BROADBAND AMPLIFIERS;

EID: 0030378193     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)