30GHz static frequency divider using a 0.2μm AlGaAs/GaAs/AlGaAs HEMT technology

Electronics Letters

Volumn 31, Issue 24, 1995, Pages 2111-2112

  Lang, M ^a   Berroth, M ^a   Rieger Motzer, M ^a   Hulsmann A ^a   Hoffmann, P ^a   Kaufel, G ^a   Kohler K ^a   Raynor, B ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Frequency dividers; Integrated circuits; Microwave integrated circuits

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; LITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM ARSENIDE; INTERNAL LOAD RESISTANCE; STATIC FREQUENCY DIVIDER;

FREQUENCY DIVIDING CIRCUITS;

EID: 0029409359     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19951430     Document Type: Article

References (6)

1. JENSEN, J.F., HAFIZI, M., STANCHINA, W.E., METZGER, R.A., and RENSCH, D.B.: ‘39.5GHz static frequency divider implemented in AlInAs/GaInAs HBT technology’, IEEE GaAs IC Symp. Dig., 1992, pp. 101-104
2. THIEDE, A., BERROTH, M., NOWOTNY, U., SEIBEL, J., BOSCH, R., KOHLER, K., RAYNOR, B., and SCHNEIDER, J.: ‘An 18 -34GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistors’, IEEE J. Solid-State Circuits, 1993, 28, (11), pp. 1167-1169
3. SAITO, T., FUJISHIRO, H.I., ICHIOKA, K., NISHI, S., and SANO, Y.: ‘0.25 μm gate inverted HEMTs for an ultra-high speed DCFL, dynamic frequency divider’. IEEE GaAs IC Symp. Dig., 1989, pp. 117- 120
4. JENSEN, J.F., SALMON, L.G., DEAKIN, D.S., and DELANEY, M.J.: ‘26GHz GaAs room-temperature dynamic divider circuit’. IEEE GaAs IC Symp. Dig., 1987, pp. 201-203
5. CHIRLIAN, P.M.: ‘Analysis and design of integrated electronic circuits’, 1981, pp. 201, 564
6. BERROTH, M., and BOSCH, R.: ‘High frequency equivalent circuit of GaAs FETs for large-signal applications’, IEEE Trans., 1991, MTT-39, (2), pp. 224-229