20Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

Electronics Letters

Volumn 32, Issue 7, 1996, Pages 683-685

  Hurm, V ^a   Benz, W ^a   Berroth, M ^a   Bronner, W ^a   Kaufel, G ^a   Kohler K ^a   Ludwig, M ^a   Olander, E ^a   Raynor, B ^a   Rosenzweig, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Integrated optoelectronics; Optical receivers; Optoelectronic devices

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; FABRICATION; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; MIM DEVICES; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILM DEVICES; TRANSCONDUCTANCE;

MIM CAPACITORS; OPTICAL RECEIVERS; OPTOELECTRONIC RECEIVERS; PHOTORECEIVER; THIN FILM RESISTOR; THRESHOLD VOLTAGE;

OPTOELECTRONIC DEVICES;

EID: 0030105591     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960470     Document Type: Article

References (5)

1. WANG, J.S., SHIH, C.G., CHANG, W.H., MIDDLETON, J.R., APOSTOLAKIS, P.J., and FENG, M.: '11GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology', IEEE Photonics. Technol. Lett., 1993, PTL-5, (3), pp. 316-318
2. PEDROTTI, K.D., PIERSON, R.L., JR. SHENG, N.H., NUBLING, R.B., PARLEY, C.W., and CHANG, M.F.: 'High-bandwidth OEIC receivers using heterojunction bipolar transistors: design and demonstration', J. Lightwave Technol., 1993, LT-11, (10), pp. 1601-1614
3. KETTERSON, A.A., SEO, J.-W., TONG, M.H., NUMMILA, K.L., MORIKUNI, J.J., CHENG, K.-Y., KANG, S.-M., and ADESIDA, I.: 'A MODFET-based optoelectronic integrated circuit receiver for optical interconnects', IEEE Trans. Electron Devices, 1993, ED-40, (8), pp. 1406-1416
4. HURM, V., ROSENZWEIG, J., LUDWIG, M., BENZ, W., BERROTH, M., HUELSMANN, A., KAUFEL, G., KOEHLER, K., RAYNOR, B., and SCHNEIDER, J.: '8.2GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5μm recessed-gate AlGaAs/GaAs HEMTs', Electron. Lett., 1991, 27, (9), pp. 734-735
5. SHIH, C.G., BARLAGE, D., WANG, J.S., and FENG, M.: 'Design and fabrication of 5Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM'. Dig. IEEE MTT-S Int. Microw. Symp., 1994, pp. 1379-1382