FET Characterization Using Gated-TLM Structure

IEEE Transactions on Electron Devices

Volumn 32, Issue 12, 1985, Pages 2824-2829

  Baier, Steven M ^a   Shur, Michael S ^b   Lee, K ^b   Cirillo, Nicholas C ^a   Hanka, Steven A ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

GALLIUM ARSENIDE MESFETS; GATED TRANSMISSION-LINE MODEL (TLM) STRUCTURE; MOBILITY ANALYSIS; SOURCE RESISTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0022229525     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22422     Document Type: Article

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