Narrow channel GaInP/InGaAs/GaAs MODFET grown by MBE with record 2-DEG density for high frequency and power applications

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 128-129

  Pereiaslavets, Boris ^a   Braunstein, Juergen ^a   Martin, Glenn ^a   Eastman, Lester F ^a   Yanka, Robert W ^a   Ballingall, James M ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

ELECTRON SHEET DENSITY; MODFET DEVICE; NARROW CHANNEL DEVICE; PSEUDOMORPHIC BARRIER; PSEUDOMORPHIC CHANNEL; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 0029703217     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)