GaInP/GaInAs/GaAs structures for high performance MODFETs, design, growth procedure, hall data and device properties

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1995, Pages 20-29

  Bachem, K H ^a   Pletschen, W ^a   Maier, M ^a   Wiegert, J ^a   Winkler, K ^a   Pereiaslavets, B ^b   Eastman, L F ^b   Tobler, H ^c   Dickman, J ^c   Narozny, P ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b School of Electrical Engineering ^*  (United States)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

DOUBLE SIDED DOPING; PSEUDOMORPHIC BARRIER; SINGLE SIDED DOPING;

FIELD EFFECT TRANSISTORS;

EID: 0029491772     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)