Faster and denser spin-tunneling random access memory (stram)

IEEE Transactions on Magnetics

Volumn 33, Issue 5 PART 1, 1997, Pages 3304-3306

  Wang, Z G ^a   He, L N ^a  

^a UNIVERSITY OF PLYMOUTH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MAGNETIC THIN FILM DEVICES; MAGNETORESISTANCE; METALLIC FILMS;

GIANT MAGNETORESISTANCE (GMR) EFFECT; SPIN TUNNELING RANDOM ACCESS MEMORY (STRAM);

RANDOM ACCESS STORAGE;

EID: 0031222031     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.617925     Document Type: Article

References (9)

1. M. Julliere, Phys. Let., 54A, p.225, 1975
2. J. S. Moodera, L. R. Kinder, T. M. Wong and R. Meservey, Phys. Rev. Lett., Vol. 74, No. 16, p.3273, 1995
3. Z.G.Wang and Y.Nakamura, "Spin-Tunneling Random Access Memory (STram)", Intermag, EC-11, 1996; IEEE Trans. Magn., Vol.32, No.5, p.4022, 1996
4. H.Asada, K.Matsuyama and K.Taniguchi, IEEE Trans. Magn., Vol.32, No.5, p.4001, 1996
5. Z. G. Wang, Y. Nakamura, IEEE Tran. Magn., Vol.32, No.2, p.520, 1996
6. J. M. Daughton, P. A. Bade, M. L. Jenson, and M. M. M. Rahmati, IEEE Trans., Mag-28, No.5, p.2488, 1992
7. I M. Daughton, Thin Solid Film, Vol.216, pp.162, 1992.
8. Z.G.Wang, D.J.Mapps, Y.Nakamura, L.N.He and D.T.Wilton, "Feasibility of ultra-dense spin-tunneling random access memory", to be published in IEEE Trans. Magn., 1997
9. D. D. Tang, P. K. Wang, V. S. Speriousu, and S. Le, INTERMAG'95, AP-03