Spin tunneling random access memory (stram)

IEEE Transactions on Magnetics

Volumn 32, Issue 5 PART 1, 1996, Pages 4022-4024

  Wang, Zhi Gang ^a   Nakamura, Yoshihisa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM COMPOUNDS; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONIC EQUIPMENT TESTING; ETCHING; FERROMAGNETIC MATERIALS; LITHOGRAPHY; MAGNETIC FIELD EFFECTS; MAGNETISM; MAGNETORESISTANCE; REMANENCE; SUBSTRATES; TUNNEL JUNCTIONS;

SPIN POLARIZED TUNNELING JUNCTIONS; SPIN TUNNELING RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 0030247512     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.539250     Document Type: Article

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