Micromagnetic study on dynamic properties of write operation in magnetic random access memory cell

IEEE Transactions on Magnetics

Volumn 32, Issue 5 PART 1, 1996, Pages 4001-4003

  Asada, H ^a   Matsuyama, K ^a   Taniguchi, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DAMPING; DEMAGNETIZATION; ELECTRIC CURRENTS; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MAGNETIC THIN FILMS; MAGNETIZATION; MAGNETORESISTANCE;

BIT STATE SWITCHING; DAMPING CONSTANT; GIANT MAGNETORESISTANCE EFFECT; MAGNETIC RANDOM ACCESS MEMORY CELL; MAGNETIZATION SWITCHING PROCESS;

RANDOM ACCESS STORAGE;

EID: 0030245069     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.539244     Document Type: Article

References (3)

1. D. D. Tang, P. K. Wang, V. S. Speriosu, S. Le and K. K. Kung, "Spinvalve RAM cell," IEEE Trans. Magn. , vol. 31, 3206(1995).
2. H. Asada, K. Matsuyama and K. Taniguchi, "Micromagnetic study on write operation in sub-micron magnetic random access memory cell," Abstract of 40th annual conference on Magnetism and Magnetic Materials, HS-05(1995).
3. S. Konishi K. Matsuyama, N. Yoshimatsu and K. Sakai, "Computer simulation for wall merging process in Bloch line read operation," IEEE Trans. Magn. , vol. 24, 3036(1988).