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Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 415-422

Role of nitrogen precursors in MOVPE growth of ZnSe

(5) Hahn, B a Preis, H a Schindler, M a Reisinger, T a Gebhardt, W a

a UNIVERSITY OF REGENSBURG (Germany)

Author keywords

Doping; Growth model; MOVPE; Photoassisted growth; Prereactions; Surface structure; Znse

Indexed keywords

ACTIVATION ENERGY; AMINES; CHEMICAL VARIABLES CONTROL; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

GROWTH MODEL; PHOTOASSISTED GROWTH; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031212471 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00171-1 Document Type: Article

Times cited : (6)

References (15)

1
- 30244470161
- S. Fujita, T. Yodo, Y. Mahuda, A. Sasaki, J. Crystal Growth 71 (1985) 169.
- (1985) J. Crystal Growth , vol.71 , pp. 169
- Fujita, S.¹ Yodo, T.² Mahuda, Y.³ Sasaki, A.⁴

2
- 0028761980
- A.C. Jones, J. Crystal Growth 145 (1994) 505.
- (1994) J. Crystal Growth , vol.145 , pp. 505
- Jones, A.C.¹

3
- 0012386249
- O. Khan, P. O'Brien, P, Hamilton, J. Walsh, A. Jones, Chemtronics 4 (1989) 244.
- (1989) Chemtronics , vol.4 , pp. 244
- Khan, O.¹ O'Brien, P.² Hamilton, P.³ Walsh, J.⁴ Jones, A.⁵

4
- 0025751968
- P. Wright, B. Cockayne, O. Parbrook, P, Oliver, A. Jones, J. Crystal Growth 107 (1990) 297.
- (1990) J. Crystal Growth , vol.107 , pp. 297
- Wright, P.¹ Cockayne, B.² Parbrook, O.³ Oliver, P.⁴ Jones, A.⁵

5
- 0030562248
- W. Gebhardt, B. Hahn, H. Stanzl, M. Deufel, J. Crystal Growth 159 (1996) 238.
- (1996) J. Crystal Growth , vol.159 , pp. 238
- Gebhardt, W.¹ Hahn, B.² Stanzl, H.³ Deufel, M.⁴

6
- 0001034673
- A. Rosenauer, T. Reisinger, F. Franzen, G. Schütz, B. Hahn, K. Wolf, J. Zweck, W. Gebhardt, J. Appl. Phys. 79 (1996) 4124.
- (1996) J. Appl. Phys. , vol.79 , pp. 4124
- Rosenauer, A.¹ Reisinger, T.² Franzen, F.³ Schütz, G.⁴ Hahn, B.⁵ Wolf, K.⁶ Zweck, J.⁷ Gebhardt, W.⁸

7
- 0003070443
- W. Tsang, Int. J. Chem. Kinet. 10 (1978) 41.
- (1978) Int. J. Chem. Kinet. , vol.10 , pp. 41
- Tsang, W.¹

8
- 0030677203
- D. Gnoth, I. Poole, T. Ng, D. Evans, N. Maung, J. Williams, A. Wright, J. Crystal Growth 170 (1997) 198.
- (1997) J. Crystal Growth , vol.170 , pp. 198
- Gnoth, D.¹ Poole, I.² Ng, T.³ Evans, D.⁴ Maung, N.⁵ Williams, J.⁶ Wright, A.⁷

9
- 0040744593
- J. Davis, M. Parrot, J. Williams, J. Crystal Growth 79 (1986) 363.
- (1986) J. Crystal Growth , vol.79 , pp. 363
- Davis, J.¹ Parrot, M.² Williams, J.³

10
- 0003877566
- Springer, Berlin
- P. Yu, M. Cardona, Fundamentals of Semiconductors, Springer, Berlin, 1996.
- (1996) Fundamentals of Semiconductors
- Yu, P.¹ Cardona, M.²

11
- 0030698482
- M. Kastner, R. Duschel, E. Soßna, W. Gebhardt, J. Crystal Growth 170 (1997) 188.
- (1997) J. Crystal Growth , vol.170 , pp. 188
- Kastner, M.¹ Duschel, R.² Soßna, E.³ Gebhardt, W.⁴

12
- 30244484239
- Berlin
- B. Hahn, M. Kastner, R. Blumberg, M. Deufel, W. Gebhardt, Proc. ICPS, Berlin, 1996, p, 1115.
- (1996) Proc. ICPS , pp. 1115
- Hahn, B.¹ Kastner, M.² Blumberg, R.³ Deufel, M.⁴ Gebhardt, W.⁵

13
- 0029346733
- T. Nakano, T. Hirano, J. Appl. Phys. 78 (1995) 251.
- (1995) J. Appl. Phys. , vol.78 , pp. 251
- Nakano, T.¹ Hirano, T.²

14
- 37049147328
- H.O. Pritchard, R.G. Sowden, A.F. Trotman-Dickenson, J. Chem. Soc. (1954) 546.
- (1954) J. Chem. Soc. , pp. 546
- Pritchard, H.O.¹ Sowden, R.G.² Trotman-Dickenson, A.F.³

15
- 0030672755
- B. Hahn, M. Deufel, M. Meier, M. Kastner, R. Blumberg, W. Gebhardt, J. Crystal Growth 170 (1997) 472.
- (1997) J. Crystal Growth , vol.170 , pp. 472
- Hahn, B.¹ Deufel, M.² Meier, M.³ Kastner, M.⁴ Blumberg, R.⁵ Gebhardt, W.⁶

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