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Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 198-202

Growth process studies by reflectance anisotropy spectroscopy on MOVPE ZnSe

(7) Gnoth, D N a Poole, I B a Ng, T L a Evans, D A a Maung, N a Williams, J O a Wright, A C a

a GLYNDWR UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; LIGHT REFLECTION; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

REFLECTANCE ANISOTROPY SPECTROSCOPY; ZINC SELENIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030677203 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00650-1 Document Type: Article

Times cited : (3)

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