Surface reconstruction of GaP (001) for various surface stoichiometries

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1205-1208

  Yoshikawa, Masahiro ^a   Nakamura, Atsushi ^a   Nomura, Takashi ^a   Ishikawa, Kenji ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

GaP(001); Molecular beam epitaxy; RHEED; Surface photo absorption; Surface reconstruction; Surface stoichiometry

Indexed keywords

GALLIUM; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS; SURFACE TREATMENT;

CRACKER CELL; REFLECTANCE DIFFERENCE SPECTROSCOPY; SOLID SOURCE MOLECULAR BEAM EPITAXY SYSTEM; SURFACE PHOTO ABSORPTION; SURFACE RECONSTRUCTION; SURFACE STOICHIOMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030079521     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1205     Document Type: Article

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