Simulation of boron diffusion in Si based on the kick-out mechanism

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 25-26

  Uematsu, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION IN SOLIDS;

B DIFFUSION; BORON DIFFUSIONS; DIFFUSION PROFILES; NEUTRAL BORON; PHYSICAL MEANINGS; POSITIVELY CHARGED; SELF INTERSTITIALS; THREE PARAMETERS;

SEMICONDUCTOR DEVICES;

EID: 85061273780     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865256     Document Type: Conference Paper

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