InP-Based HBT Technology for Millimeter-Wave MMIC VCOs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 199-202

  Cowles, J ^a   Tran, L ^a   Wang, H ^a   Lin, E ^a   Block, T ^a   Streit, D ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM PHOSPHIDE; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; FABRICATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; VARIABLE FREQUENCY OSCILLATORS;

BIPOLAR TECHNOLOGY; FREQUENCY SOURCE; FUNDAMENTAL FREQUENCIES; HBT TECHNOLOGY; INP-HBT; LOWER NOISE; MILLIMETER-WAVE MMIC; MMIC TECHNOLOGY; TUNABLE FREQUENCY; W BANDS;

III-V SEMICONDUCTORS; HETEROJUNCTION BIPOLAR TRANSISTORS;

MILLIMETER WAVE OSCILLATOR; W BAND OSCILLATOR;

EID: 0030410575     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553567     Document Type: Conference Paper

References (10)

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