Selectively oxidized GaAs MESFET's transferred to a Si substrate

IEEE Electron Device Letters

Volumn 18, Issue 4, 1997, Pages 138-140

  Wheeler, C B ^a   Mathine, D L ^a   Johnson, S R ^a   Maracas, G N ^b   Allee, D R ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THERMOOXIDATION;

CHANNEL REGION; ELECTRICAL ISOLATION; SUBSTRATE REMOVAL PROCESS; TRANSFER PROCESSES;

MESFET DEVICES;

EID: 0031118268     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.563308     Document Type: Article

References (10)

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