Preparation of nbcxn1-x josephson junctions with tinx barriers

IEEE Transactions on Applied Superconductivity

Volumn 7, Issue 2 PART 3, 1997, Pages 2801-2804

  Wang, Qian ^a   Kikuchi, Tsuneo ^a   Kohjiro, Satoshi ^a   Akira, ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; FILM GROWTH; FILM PREPARATION; MAGNETIC FIELD EFFECTS; METALLIC FILMS; POLYCRYSTALLINE MATERIALS; SPUTTERING; TITANIUM NITRIDE;

TITANIUM NITRIDE FILMS;

JOSEPHSON JUNCTION DEVICES;

EID: 0031168516     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.621819     Document Type: Article

References (12)

1. K.K. Likharev and V.K. SemenovRSFQ logic/memory family: a new Josephson junction technology for sub-terahertz-clock-frequency digital systems IEEE Trans. Appl. Supercond. vol.1pp.3-28 March1991.
2. K.K. Likharev Dynamics of Josephson Junctions and Circuits Gordon and Breach Science Publishers1986.
3. O.A.Mukhanov S.V.Rylov V.K.Semenov and S.V.VyshenskiiRSFQ logic arithmetic IEEE Trans Magnetics vol.25pp.857-860 March1989.
4. Harry KrogerJosephson Devices Coupled by Semiconductor Links IEEE Trans. Electron Devices vol . ED-27 No.10 pp.2016-2026 October 1980.
5. A.Barone and G.Paterno Physics and Applications of the Josephson Effects John Wiley and Sons1982.
6. R. Kümmel U.Gunsenheimer and R. NicolskyAndreev scattering of quasiparticle wave packets and current-voltage characteristics of superconducting metallic weak links Phys. Rev. B42pp.3992-4009 1 September1990.
7. S.P.BenzSuperconductor-normal-superconductor junctions for programmable voltage standards Appl. Phys. Lett.67(18)pp.2714-2716 30 October1995.
8. K.S.Keskar T.Yamashita Y.Onodera Y.Goto and T.Asorf reactively sputtered superconducting NbNx films J.Appl.Phys. vol.45 No.7pp.3102-3105 July1974.
9. 1-x films prepared by reactive rf magnetron sputtering Jpn. J. Appl Phys vol.32(1993)pp.L834-L836Part2No.6B15Junel993.
10. A.Shoji F.Shinoki S.Kosaka M. Aoyagi and H.HayakawaNiobium nitride Josephson tunnel junctions with Magnesium oxide barriers Appl. Phys. Lett. vol.46 No.llpp.1098-1100 June1985.
11. Marc WittmerProperties and microelectronic applications of thin films of refractory metal nitrides J. Vac Sei. Technol A3(4)pp.1797-1803 Jul/Aug1985.
12. B.O. Johansson J.-E. Sundgren J.E. Greene A. Rockett and S.A. BamettGrowth and properties of single crystal TIN films deposited by reactive magnetron sputtering J.Vac.Sci.Technol. A3(2)pp.303-307 Mar/Apr1985.