Fabrication of a new highly-symmetrical, in-plane accelerometer structure by anisotropic etching of (100) silicon

Journal of Micromechanics and Microengineering

Volumn 7, Issue 2, 1997, Pages 71-78

  Schröpfer, Gerold ^a   Ballandras, Sylvain ^a   De Labachelerie, Michel ^a   Blind, Pascal ^b   Ansel, Yannick ^c  

^a FEMTO ST INSTITUTE   (France)

^b CETEHOR   (France)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; ASPECT RATIO; ETCHING; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SILICON SENSORS; SILICON WAFERS; SINGLE CRYSTALS;

MICROACCELEROMETERS; OPTICAL COMPARATORS; SEISMIC MASS DISPLACEMENT MEASUREMENTS; WET ETCHING;

MICROELECTRONIC PROCESSING;

EID: 0031167434     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/7/2/005     Document Type: Article

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