Methods of avoiding edge effects on semiconductor diodes

Journal of Physics D: Applied Physics

Volumn 15, Issue 4, 1982, Pages 517-536

  Tove, P A ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE EFFECTS;

SEMICONDUCTOR DIODES;

EID: 0020115602     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/15/4/005     Document Type: Review

References (41)

1. Progress in the fabrication of γ-ray detectors from high purity germanium
2. Diode edge effect on doping-profile measurements
3. Advances in Semiconductor Detectors for Charged Particle Space Spectrometry
4. High-voltage planar p-n junctions
5. Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics
6. The Field Singularity at the Edge of an Electrode on a Semiconductor Surface
7. Planar In0.53Ga0.47As Avalanche Photodiodes with Guard-Ring Structure
8. Barrier height enhancement in p-silicon MIS solar cells
9. Passivation of p-n junction in crystalline silicon by amorphous silicon
10. A substrate etch geometry for near ideal breakdown voltage in p-n junction devices
11. p-n junction—Schottky barrier hybrid diode