Trap generation in buried oxides of silicon-on-insulator structures by vacuum ultraviolet radiation

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages 749-753

  Afanas'ev, V V ^a   Stesmans, A ^a   Revesz, A G ^b,d   Hughes, H L ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Revesz Associates   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; HYDROGEN; ION IMPLANTATION; OXIDES; OXYGEN; PARAMAGNETIC RESONANCE; PLASMA ETCHING; RADIATION; SILICON WAFERS;

BURIED OXIDE; ELECTRON TRAPPING MEASUREMENT; SEPARATION BY IMPLANTATION OF OXYGEN; VACUUM ULTRAVIOLET RADIATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031076535     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837479     Document Type: Article

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