Positive charge trapping in SOI materials

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 34-35

  Lawrence, R K ^a   Mrstik, B J ^a   Hughes, H L ^a   McMarr, P J ^a   Anc, M J ^a  

^a ARACOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; OXIDES; SEMICONDUCTING SILICON; SILICON WAFERS; VOLTAGE MEASUREMENT;

BULK THERMAL OXIDES; BURIED OXIDE (BOX); POSITIVE CHARGE TRAPPING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030401674     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)