Cathodoluminescence of GaN films grown under Ga and N rich conditions by radio-frequency-molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 112-116

  Cho, Sung Hwan ^a   Tanaka, Uitsu ^a   Maruyama, Takahiro ^a   Akimoto, Katsuhiro ^a   Okumura, Hajime ^b   Yoshida, Sadafumi ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Cathodoluminescence; GaN; Microsegregation

Indexed keywords

CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

GALLIUM NITRIDE; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0031141292     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00865-2     Document Type: Article

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