메뉴 건너뛰기




Volumn 44, Issue 2, 1997, Pages 117-124

Schottky junctions on semi-insulating LEG gallium arsenide for X- and 7-ray spectrometers operated at and below room temperature

Author keywords

Detectors; Gallium Arsenide (GaAs); Spectroscopy, x ray

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; GAMMA RAY SPECTROMETERS; MONTE CARLO METHODS; OHMIC CONTACTS; RADIATION DETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS; X RAY SPECTROGRAPHS;

EID: 0031121205     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.568787     Document Type: Article
Times cited : (13)

References (26)
  • 1
    • 43949140373 scopus 로고    scopus 로고
    • "Evaluation of epitaxial n-GaAs for nuclear radiation detection,"
    • vol. 94, pp. 463-476, 1971.
    • J. E. Eberhardt, R. D. Ryan, and A. J. Tavendale, "Evaluation of epitaxial n-GaAs for nuclear radiation detection," Nucl. Instrum. Methods, vol. 94, pp. 463-476, 1971.
    • Nucl. Instrum. Methods
    • Eberhardt, J.E.1    Ryan, R.D.2    Tavendale, A.J.3
  • 2
    • 33745946326 scopus 로고    scopus 로고
    • "Gallium Arsenide surface barrier detectors,"
    • vol. 98, pp. 179-180, 1972.
    • T. Kobayashi and T. Sugita, "Gallium Arsenide surface barrier detectors," Nucl. Instrum. Methods, vol. 98, pp. 179-180, 1972.
    • Nucl. Instrum. Methods
    • Kobayashi, T.1    Sugita, T.2
  • 4
    • 0342340501 scopus 로고    scopus 로고
    • "GaAs biomédical probes and their applications in nuclear medicine,"
    • vol. NS-20, no. 1, pp. 310-317, 1973.
    • T. Kobayashi, T. Sugita, S. Takayanagi, M. Lio, and Y. Sasaki, "GaAs biomédical probes and their applications in nuclear medicine," IEEE Trans. Nucl. Sci., vol. NS-20, no. 1, pp. 310-317, 1973.
    • IEEE Trans. Nucl. Sci.
    • Kobayashi, T.1    Sugita, T.2    Takayanagi, S.3    Lio, M.4    Sasaki, Y.5
  • 6
    • 44049110435 scopus 로고    scopus 로고
    • "Development of bulk GaAs room temperature radiation detectors,"
    • vol. A322, pp. 487-492, 1992.
    • D. S. McGregor, G. F. Knoll, Y. Eisen, and R. Brake, "Development of bulk GaAs room temperature radiation detectors," Nucl. Instrum. Methods, vol. A322, pp. 487-492, 1992.
    • Nucl. Instrum. Methods
    • McGregor, D.S.1    Knoll, G.F.2    Eisen, Y.3    Brake, R.4
  • 9
    • 0028495268 scopus 로고    scopus 로고
    • "First results from GaAs double-sided detectors,"
    • vol. A348, pp. 514-517, 1995.
    • S. P. Beaumont et al., "First results from GaAs double-sided detectors," Nucl. Instrum. Methods, vol. A348, pp. 514-517, 1995.
    • Nucl. Instrum. Methods
    • Beaumont, S.P.1
  • 10
    • 33747438345 scopus 로고    scopus 로고
    • "Gallium Arsenide and related compound,"
    • San Miniato, Italy, Mar. 21-24, 1995. World Scientific, 1996, ch. 1.
    • P. G. Pelfer, J. Ludwig, K. Runge, and H. S. Rupprecht, Eds., "Gallium Arsenide and related compound," in Proc. 3rd Int. Wkshp., San Miniato, Italy, Mar. 21-24, 1995. World Scientific, 1996, ch. 1.
    • Proc. 3rd Int. Wkshp.
    • Pelfer, P.G.1    Ludwig, J.2    Runge, K.3    Rupprecht, H.S.4
  • 12
    • 0030244790 scopus 로고    scopus 로고
    • "Performance of SI LEG GaAs detectors at 20°C and -30°C for X- And 7-ray spectroscopy,"
    • vol. A379, pp. 152-154, 1996.
    • G. Bertuccio, M. Alietti, C. Canali, A. Cetronio, C. Chiossi, and F. Nava, "Performance of SI LEG GaAs detectors at 20°C and -30°C for X- and 7-ray spectroscopy," Nucl. Instrum. Methods, vol. A379, pp. 152-154, 1996.
    • Nucl. Instrum. Methods
    • Bertuccio, G.1    Alietti, M.2    Canali, C.3    Cetronio, A.4    Chiossi, C.5    Nava, F.6
  • 14
    • 0028675234 scopus 로고    scopus 로고
    • "Bias dependence of the depletion layer width in semiinsulating GaAs by charge collection scanning microscopy,"
    • vol. 8, no. 4, pp. 969-978, 1994.
    • A. Castaldini, A. Cavallini, C. Del Papa, M. Alietti, C. Canali, F. Nava, and C. Lanzieri, "Bias dependence of the depletion layer width in semiinsulating GaAs by charge collection scanning microscopy," Scanning Microscopy, vol. 8, no. 4, pp. 969-978, 1994.
    • Scanning Microscopy
    • Castaldini, A.1    Cavallini, A.2    Del Papa, C.3    Alietti, M.4    Canali, C.5    Nava, F.6    Lanzieri, C.7
  • 15
    • 0030262395 scopus 로고    scopus 로고
    • "Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- And 7-ray spectroscopy,"
    • vol. A380, pp. 301-307, 1996.
    • G. Bertuccio, A. Pullia, and G. De Geronimo, "Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and 7-ray spectroscopy," Nucl. Instrum. Methods, vol. A380, pp. 301-307, 1996.
    • Nucl. Instrum. Methods
    • Bertuccio, G.1    Pullia, A.2    De Geronimo, G.3
  • 17
    • 33645405191 scopus 로고    scopus 로고
    • "A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors,"
    • vol. 64, no. 11, pp. 3294-3298, 1993.
    • G. Bertuccio and A. Pullia, "A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors," Rev. Sci. Instrum., vol. 64, no. 11, pp. 3294-3298, 1993.
    • Rev. Sci. Instrum.
    • Bertuccio, G.1    Pullia, A.2
  • 18
    • 0010778173 scopus 로고    scopus 로고
    • "Zum mechanismus des lichtelektrischen primarstromes in isolierenden kristallen,"
    • vol. 77, pp. 235-345, 1932.
    • K. Hecht, "Zum mechanismus des lichtelektrischen primarstromes in isolierenden kristallen," Zeitschrift für Physik, vol. 77, pp. 235-345, 1932.
    • Zeitschrift Für Physik
    • Hecht, K.1
  • 19
    • 5244268963 scopus 로고    scopus 로고
    • "Transient photoconductivy in Silver Chloride at low temperature,"
    • pp. 462-4171, 1958.
    • R. S. Van Heyningen and F. C. Brown, "Transient photoconductivy in Silver Chloride at low temperature," Phys. Rev., vol. Ill, pp. 462-4171, 1958.
    • Phys. Rev., Vol. Ill
    • Van Heyningen, R.S.1    Brown, F.C.2
  • 20
    • 0000766705 scopus 로고    scopus 로고
    • "Noise, trapping and energy resolution in semiconductor gamma-ray spectrometers,"
    • vol. 14, pp. 487-491, 1967.
    • R. B. Day, G. Dearnaley, and J. M. Palms, "Noise, trapping and energy resolution in semiconductor gamma-ray spectrometers," IEEE Trans. Nucl. Sci., vol. 14, pp. 487-491, 1967.
    • IEEE Trans. Nucl. Sci.
    • Day, R.B.1    Dearnaley, G.2    Palms, J.M.3
  • 21
    • 0014657289 scopus 로고    scopus 로고
    • "The effect of carrier trapping in semiconductor gamma-ray spectrometers,"
    • vol. 76, pp. 317-321, 1967.
    • R. Trammel and F. J. Walter, "The effect of carrier trapping in semiconductor gamma-ray spectrometers," Nucl. Instrum. Methods, vol. 76, pp. 317-321, 1967.
    • Nucl. Instrum. Methods
    • Trammel, R.1    Walter, F.J.2
  • 22
    • 0001562039 scopus 로고    scopus 로고
    • "Gamma response of semi-insulating material in the presence of trapping and detrapping,"
    • vol. 40, no. 9, pp. 3838-3854, 1969.
    • W. Akutagawa and K. Zanio, "Gamma response of semi-insulating material in the presence of trapping and detrapping," J. Appl. Phys., vol. 40, no. 9, pp. 3838-3854, 1969.
    • J. Appl. Phys.
    • Akutagawa, W.1    Zanio, K.2
  • 24
    • 0030211791 scopus 로고    scopus 로고
    • "Improving CdZnTe X-ray detector performance by cooling and rise time discrimination,"
    • vol. A377, pp. 484-486, 1996.
    • A. Niemela, H. Sipila, and V. I. Ivanov, "Improving CdZnTe X-ray detector performance by cooling and rise time discrimination," Nucl. Instrum. Methods, vol. A377, pp. 484-486, 1996.
    • Nucl. Instrum. Methods
    • Niemela, A.1    Sipila, H.2    Ivanov, V.I.3
  • 26
    • 0002734439 scopus 로고    scopus 로고
    • "Accurate determination of the ionization energy in semiconductor detectors,"
    • vol. 59, pp. 45-55, 1968. See réf. [1] for GaAs. Both the considered values for Si and GaAs are actually referred to α particles
    • R. H. Fehl, F. S. Goulding, D. A. Landis, and M. Lenzlinger, "Accurate determination of the ionization energy in semiconductor detectors," Nucl. Instrum. Methods, vol. 59, pp. 45-55, 1968. See réf. [1] for GaAs. Both the considered values for Si and GaAs are actually referred to α particles.
    • Nucl. Instrum. Methods
    • Fehl, R.H.1    Goulding, F.S.2    Landis, D.A.3    Lenzlinger, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.