Evaluation of epitaxial n-GaAs for nuclear radiation detection

Nuclear Instruments and Methods

Volumn 94, Issue 3, 1971, Pages 463-476

  Eberhardt, J E ^a   Ryan, R D ^a   Tavendale, A J ^a  

^a AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43949140373     PISSN: 0029554X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0029-554X(71)90008-5     Document Type: Article

References (55)

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2. Performance of CdTe as a Gamma Spectrometer and Detector
3. Nuclear Detectors from Cadmium Telluride Grown from a Tellurium Solvent
4. EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
5. Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown Films
6. Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
7. Proc. Symp. Physics and chemistry of fission
8. Multiplication in the Fission Fragment Pulse Height Response of Silicon Surface Barriers
9. Noise, Trapping and Energy Resolution in Semiconductor Gamma-Ray Spectrometers
10. Fano Factor Fact and Fallacy
11. Biomedical Applications of Avalanche Semiconductor Detectors
12. Eye Tumor Identification Tests Using Semiconductor Detectors