Bias dependence of the depletion layer width in semi-insulating GaAs by charge collection scanning microscopy

Scanning Microscopy

Volumn 8, Issue 4, 1994, Pages 969-978

  Castaldini, A ^a   Cavallini, A ^a   Del Papa, C ^a   Alietti, M ^a   Canali, C ^a   Nava, F ^a   Lanzieri, C ^a   Jakubowicz, A ^a   Holt, D B ^a   Phang, J C H ^a   Kittler, M ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Charge collection microscopy; conductivity; depletion layer width; detector active region; electron beam induced current; high resistivity materials; optical beam induced current; photocurrent profiles; radiation detectors; semi insulating materials

Indexed keywords

GALLIUM ARSENIDE;

COMPUTER SYSTEM; CONFERENCE PAPER; ELECTRIC CURRENT; ELECTRON BEAM; ELECTRON MICROSCOPY; PRIORITY JOURNAL;

EID: 0028675234     PISSN: 08917035     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (0)