Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 380, Issue 1-2, 1996, Pages 301-307

  Bertuccio, G ^a   Pullia, A ^a   De Geronimo, G ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; AMPLIFIERS (ELECTRONIC); GAMMA RAY SPECTROMETERS; GATES (TRANSISTOR); RADIATION DETECTORS; SPURIOUS SIGNAL NOISE; TECHNOLOGY; TRANSISTORS; X RAY SPECTROMETERS;

CHARGE PREAMPLIFIER; DRAIN CURRENT NOISE; SEMICONDUCTOR DETECTORS;

SIGNAL THEORY;

EID: 0030262395     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00474-3     Document Type: Article

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