Transmission electron microscopy of sublimation-grown GaN single crystal and GaN homoepitaxial film

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 SUPPL. B, 1996, Pages

  Okada, Tatsuya ^a   Kurai, Satoshi ^a   Naoi, Yoshiki ^a   Nishino, Katsushi ^a   Inoko, Fukuji ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Dislocation density; Focused ion beam micromachining; GaN; Homoepitaxy; Transmission electron microscopy

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; ION BEAMS; MICROMACHINING; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBLIMATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAM MACHINING; GALLIUM NITRIDE; HOMOEPITAXIAL FILM; HOMOEPITAXY;

SEMICONDUCTING FILMS;

EID: 0030259931     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1318     Document Type: Article

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