Monolithic MESFET distributed baluns based on the distributed amplifier gate-line termination technique

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 2, 1997, Pages 188-195

  Baree, Atiqul H ^a   Robertson, Lan D ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Balun; Distributed amplifier; MESFET; MMIC

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; CIRCUIT THEORY; ELECTRIC IMPEDANCE; ELECTRIC NETWORK TOPOLOGY; ELECTROMAGNETIC WAVE PROPAGATION; GATES (TRANSISTOR); NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

ANTIPHASE OUTPUT; DISTRIBUTED AMPLIFIERS; GATE LINE TERMINATION; MONOLITHIC DISTRIBUTED BALUNS; POWER GAIN;

MESFET DEVICES;

EID: 0031073082     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.557599     Document Type: Article

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