State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots

Superlattices and Microstructures

Volumn 21, Issue 4, 1997, Pages 541-558

  Raymond, S ^a,c   Fafard, S ^a   Poole, P J ^a   Wojs, A ^a,d   Hawrylak, P ^a   Gould, C ^a,e   Sachrajda, A ^a   Charbonneau, S ^a   Leonard, D ^b,f   Leon, R ^b,g   Petroff, P M ^b   Merz, J L ^b,h  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF OTTAWA   (Canada)

^d WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^e UNIVERSITÉ DE SHERBROOKE   (Canada)

^f Santa Barbara Research Center   (United States)

^g AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^h 236 Hesburgh Center for International Studies   (United States)

Author keywords

Carrier relaxation; Optical properties; Quantum dots

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC RELAXATION; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; EMISSION SPECTROSCOPY; EXCITONS; FERMI LEVEL; MAGNETIC FIELDS; MAGNETIC PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

INTERBAND TRANSITIONS; SELF ASSEMBLED QUANTUM DOTS; STATE FILLING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030707088     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0194     Document Type: Article

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