Study of temperature-dependent exciton dynamics in a single quantum well with self-assembled islands

Surface Science

Volumn 361-362, Issue , 1996, Pages 810-813

  Marquezini, M V ^a   Brasil, M J S P ^a   Brum, J A ^a   Poole, P ^b   Charbonneau, S ^b   Tamargo, M C ^c  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c CITY COLLEGE OF NEW YORK   (United States)

Author keywords

Indium arsenide; Photoluminescence; Quantum Wells; Semi empirical models and model calculations; Semiconductor semiconductor heterostructures; Semiconductor Semiconductor interfaces; Sum frequency generation; Surface roughening

Indexed keywords

CALCULATIONS; DYNAMICS; EXCITONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LUMINESCENCE; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

INTER ISLAND TRANSFERRING; LUMINESCENCE MEASUREMENTS; RADIATIVE RECOMBINATION; SELF ASSEMBLED ISLANDS; TEMPERATURE DEPENDENT EXCITON DYNAMICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17144439780     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00539-0     Document Type: Article

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