Statistics of three-dimensional island growth for a reactive interface: Ni/GaAs(110)

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 11, 1996, Pages 8218-8230

  Quesenberry, P ^a   First, P ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000516798     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.8218     Document Type: Article

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