Grown mirrors of InP formed by dry etching and selective CBE regrowth for short cavity lasers

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 308-313

  Gotoda, M ^a   Sugimoto, H ^a   Isu, T ^a   Nunoshita, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DRY ETCHING; ELECTRIC CURRENTS; FABRY-PEROT INTERFEROMETERS; LASERS; MIRRORS; OSCILLATIONS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SILICA;

GROWN MIRRORS; PULSED OSCILLATIONS; REGROWTH; SELECTIVE CHEMICAL BEAM EPITAXY; SHORT CAVITY LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR GROWTH;

EID: 0030194083     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00023-1     Document Type: Article

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