High energy electron induced displacement damage in silicon

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1208-1214

  Dale, Cheryl J ^a   Marshall, Paul W ^a,b   Burke, Edward A ^c   Summers, Geoffrey P ^a   Wolicki, Eligius A ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c MISSION RESEARCH CORPORATION   (United States)

^d Wolicki Associates Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--DEFECTS; ELECTRON BEAMS; NEUTRONS; PROTONS; SEMICONDUCTING SILICON;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECT LEVELS; DISPLACEMENT DAMAGE FACTORS;

TRANSISTORS, BIPOLAR;

EID: 0024166943     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25441     Document Type: Article

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