Amorphous silicon/silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 335-

  De Cesare, G ^a   Irrera, F ^a   Palma, F ^a   Tucci, M ^a   Jannitti, E ^b   Naletto, G ^c   Nicolosi, P ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARBON; CHEMICAL VAPOR DEPOSITION; COSTS; ENERGY GAP; FABRICATION; GLASS; QUANTUM EFFICIENCY; SILICON CARBIDE; THICKNESS MEASUREMENT; THIN FILM DEVICES; ULTRAVIOLET SPECTROSCOPY;

PENETRATION LENGTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM PHOTODIODES; VACUUM ULTRAVIOLET SPECTROSCOPY;

PHOTODIODES;

EID: 0029345963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115436     Document Type: Article

References (11)