Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys

Diamond and Related Materials

Volumn 2, Issue 5-7, 1993, Pages 773-777

  De Cesare, G ^a   Galluzzi, F ^a   Guattari, G ^a   Leo, G ^a   Vincenzoni, R ^a   Bemporad, E ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION EFFECTS; ELECTRONIC PROPERTIES; STRUCTURE (COMPOSITION); SYNTHESIS (CHEMICAL); THERMAL EFFECTS; TRANSPARENCY; VAPOR DEPOSITION;

CARBON SILICON ALLOYS; HYDROGEN DILUTION; SUBSTRATE TEMPERATURE;

SILICON CARBIDE;

EID: 0027585362     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(93)90221-M     Document Type: Article

References (15)

1. Electronic and optical properties of a-Si1-xCxfilms prepared from a H2-diluted mixture of SiH4and CH4
2. Properties of a-Si1-xCx:H alloys deposited in the hot-plasma - Box glow discharge reactor
3. Distribution of occupied states in a-C:H and a-Si1-xCx: H alloys as determined by total yield spectroscopy
4. A complete bonding and banding study of amorphous α-SiC and α-SiC:H alloys
5. Gap density of states in amorphous silicon-germanium alloy: Influence on photothermal deflection spectroscopy and steady-state conductivity measurements
6. Transport in hydrogenated amorphous silicon p-i-n solar cells