Ambipolar diffusion coefficients in a-SiC:H alloys in steady-state and transient grating measurements

Materials Research Society Symposium Proceedings

Volumn 297, Issue , 1993, Pages 497-501

  Weinert, H ^a   Petrauskas, M ^a   Kolenda, J ^a   Galeckas, A ^a   Wang, F ^a   Schwarz, R ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; BAND STRUCTURE; CHARGE CARRIERS; DENSITY (SPECIFIC GRAVITY); DIFFUSION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; HYDROGENATION; PHOTOEMISSION; RELAXATION PROCESSES; SEMICONDUCTOR SUPERLATTICES; SILICON CARBIDE;

AMBIPOLAR DIFFUSION COEFFICIENTS; CARRIER RECOMBINATION; ENERGY RELAXATION; HYDROGENATED AMORPHOUS SILICON; NONEQUILIBRIUM CARRIERS; TRANSIENT GRATING EXPERIMENTS;

AMORPHOUS MATERIALS;

EID: 0027847304     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-297-497     Document Type: Conference Paper

References (9)