Visible-blind ultraviolet photodetectors based on GaNp-n junctions

Electronics Letters

Volumn 31, Issue 20, 1995, Pages 1781-1782

  Chen, Q ^a   Khan, M Asif ^a   Sun, C J ^a   Yang, J W ^a  

^a APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; LEAKAGE CURRENTS; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS;

ELECTRODE PATTERNS; RESPONSIVITY VALUES; SEMICONDUCTING GALLIUM NITRIDE; VISIBLE BLIND ULTRAVIOLET PHOTODETECTORS; WAVELENGTH;

PHOTODETECTORS;

EID: 0029369545     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19951190     Document Type: Article

References (6)

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3. WESTE, N.H.E. and ESHRAGHIAN, K.: ‘Principles of CMOS VLSI design - A systems perspective’ (Addison-Wesley, 1993), 2nd Edn
4. YANO, K., YAMANAKA, T., NISHIDA, T., SAITO, M., SHIMOHIGASHI, K., and SHIMIZU, A.: ‘A 3.8ns CMOS 16×l6-b multiplier using complementary pass-transistor logic’, IEEE J. Solid-State Circuits, 1990, SSC-25, (2), pp. 388-395
5. LYNCH, T., and SWARTZLANDER, E.E. Jr.: ‘A spanning tree carry lookahead adder’, IEEE Trans., 1992, C-41, (8), pp. 931-939
6. SUZUKI, K., YASASHIMA, M., NAKAYAMA, T., IZUMIKAWA, M., NOMURA, M., IGURA, H., HEIUCHI, H., GOTO, J., INOUE, T., KOSEKI, Y., ABIKO, H., OKABE, K., ONO, A., YANO, Y., and YAMADA, H.: ‘A 500 MHz, 32 bit, 0.4µm CMOS RISC processor’, IEEE J. Solid-State Circuits, 1994, SSC-29, (12), pp. 1464-1473