Dynamic single event effects in a CMOS/thick SOI shift register

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 960-966

  Gardic, F ^a   Flament, O ^a   Musseau, O ^a   Brisset, C ^a   Martinez, M ^a   Brunet, J P ^a   Blanquart, L ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT TESTING; PROTONS; RADIATION EFFECTS; SILICON ON INSULATOR TECHNOLOGY;

ANGLE OF INCIDENCE; PROTON ENERGY;

SHIFT REGISTERS;

EID: 0030164334     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510740     Document Type: Article

References (8)

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