Study Of Proton Radiation Effects On Analog Ic Designed For High Energy Physics In A Bicmos-Jfet Radhard Soi Technology.

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2525-2529

  Blanquart, L ^a   Delpierre, P ^a   Habrard, M C ^a   Mekkaoui, A ^a   Mouthuy, T ^a   Dentan, M ^b   Delagnes, E ^b   Fourches, N ^b   Rouger, M ^b   Truche, R ^c   Delevoye, E ^c   De Pontcharra, J ^c   Blanc, J P ^d   Flament, O ^d   Leray, Jl ^d   Musseau, O ^d  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b CEA SACLAY   (France)

^c CEA LETI   (France)

^d CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIPOLAR TRANSISTORS; BUFFER CIRCUITS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; ELECTRIC NETWORK PARAMETERS; ELECTRIC VARIABLES MEASUREMENT; PROTONS; RADIATION EFFECTS; TRANSCONDUCTANCE; VOLTAGE CONTROL;

ANALOG INTEGRATED CIRCUITS; PROTON RADIATION EFFECTS; RADIATION HARDNESS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0028721241     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340611     Document Type: Article

References (9)

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