A silicon-based integrated NMOS-p-i-n photoreceiver

IEEE Transactions on Electron Devices

Volumn 43, Issue 3, 1996, Pages 411-416

  Garrett, L D ^a   Qi, J ^a   Schow, C L ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; LIGHT ABSORPTION; LIGHT SOURCES; MOSFET DEVICES; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; BREAKDOWN VOLTAGE; DARK CURRENT; INTEGRATED NMOS PIN PHOTORECEIVER; MONOLITHIC OPTICAL RECEIVER;

INTEGRATED OPTOELECTRONICS;

EID: 0030107436     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485654     Document Type: Article

References (11)

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