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A new integrated pixel detector for high energy physics
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A new device structure and process flow for a low leakage PIN-diode-based integrated detector array
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June
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W. Snoeys, J. Plummer, S. Parker, and C. Kenney, “A new device structure and process flow for a low leakage PIN-diode-based integrated detector array,” Proc. Device Res. Conf., 1991, Boulder, CO, June 1991.
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Snoeys, W.1
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S. Parker, C. Kenney, W. Snoeys, and J. Plummer, “First results from an integrated pixel detector,” Proc. Joint. Int. Lepton-Photon Symp. and Europhys. Conf. on High Energy Phys., Geneva, Switzerland, 1991.
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A prototype monolithic pixel detector
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C. Kenney, S. Parker, W. Snoeys, J. Plummer, and C.H. Aw, “A prototype monolithic pixel detector,” presented at the Int. Symp. on Development and Applications of Semicond. Tracking Detectors, Hiroshima, Japan, May 1993, and submitted to Nucl. Instr. and Meth.
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The Mark-II silicon strip vertex detector
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H. M. Hobgood, P. S. Ravishankar, and R. N. Thomas, “Purity and uniformity limitations in large-diameter float-zone silicon growth: implications for high voltage power device performance,” Proc. 1990 ECS Semicond. Silicon Conf., Montreal, 1990.
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